3

In depth study of the compensation in annealed heavily carbon doped GaAs

Year:
2006
Language:
english
File:
PDF, 262 KB
english, 2006
6

Stark effect in GaNAsBi/GaAs quantum wells operating at 1.55μm

Year:
2015
Language:
english
File:
PDF, 475 KB
english, 2015
13

Growth of GaN Films on Porous Silicon by MOVPE

Year:
2000
Language:
english
File:
PDF, 90 KB
english, 2000
14

Annealing Effect on GaN Buffer Layer Surface

Year:
2001
Language:
english
File:
PDF, 154 KB
english, 2001
21

Diffusion of vanadium in GaAs

Year:
2004
Language:
english
File:
PDF, 190 KB
english, 2004
22

AP-MOVPE of thin GaAs1−xBix alloys

Year:
2006
Language:
english
File:
PDF, 606 KB
english, 2006
28

Atmospheric-pressure metalorganic vapour phase epitaxy optimization of GaAsBi alloy

Year:
2008
Language:
english
File:
PDF, 904 KB
english, 2008
30

Etching of GaAs by CCl4 and VCl4 in a metalorganic vapor-phase epitaxy reactor

Year:
1998
Language:
english
File:
PDF, 110 KB
english, 1998
32

In situ optical monitoring of the decomposition of GaN thin films

Year:
1999
Language:
english
File:
PDF, 148 KB
english, 1999
33

Hot filament assisted metalorganic vapor-phase deposition of GaN

Year:
1999
Language:
english
File:
PDF, 183 KB
english, 1999
35

New photoluminescence lines in Vanadium doped GaAs grown by MOVPE

Year:
2003
Language:
english
File:
PDF, 102 KB
english, 2003
37

Stress and density of defects in Si-doped GaN

Year:
2006
Language:
english
File:
PDF, 684 KB
english, 2006
38

Statistical analysis of vanadium in gallium arsenide

Year:
2005
Language:
english
File:
PDF, 235 KB
english, 2005
40

In

Year:
2012
Language:
english
File:
PDF, 1.08 MB
english, 2012